Engineering/Microwave Engineering Mcq Set 2 Sample Test,Sample questions

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Question: 
 A PIN diode can be used in either a series or a shunt configuration to form a __________

1.Single pole single throw switch

2.Single pole double throw switch

3.Amplifier

4.Oscillator

Question: 
 Any semiconductor diode has a junction capacitance varying with reverse bias. If such a diode has microwave characteristics, it is called:

1. IMPATT diode

2.TRAPITT diode

3.SKOTTKY diode

4.None of the mentioned

Question: 
 As the degree of non-linearity of a transistor or a diode increases, the power gain of the device:

1.Increases

2.Decreases

3.Remains a constant

4.None of the mentioned

Question: 
 For a shunt configuration switch, the diode impedance is 40 Ω and the terminated line characteristic impedance is 50 Ω. Then the insertion loss of the switch is:

1.2.2 dB

2.4.2 dB

3.8.4 dB

4.3.6 dB

Question: 
 GaAs is used in the fabrication of GUNN diodes because:

1.GaAs is cost effective

2.It less temperature sensitive

3.it has low conduction band electrons

4.less forbidden energy gap

Question: 
 Gain of a parametric amplifier in terms of the frequencies involved in their operation is:

1.(fP – fS)/fS

2. fS/ (fP – fS)

3. fP/fS

4.None of the mentioned

Question: 
 If the third order intercept point of a receiver is 35 dBm and the total noise in the receiver is -47.4 dBm signals to noise ratio is 10, then the spurious free dynamic range is:

1. 50.9 dB

2. 44.9 dB

3. 34.9 dB

4.67 dB

Question: 
 In a coherent cascade network, if the third order intercept point of an amplifier is 158 mW and the third order intercept point of a mixer is 5 mW, with an insertion loss of 6 dB, then the third order intercept point of the coherent cascade is:

1.2 mW

2.4 mW

3. 4.4 mW

4.5 mW

Question: 
 In a non coherent cascade network, if the third order intercept point of an amplifier is 158 mW and the third order intercept point of a mixer is 5 mW, with an insertion loss of 6 dB, then the third order intercept point of the coherent cascade is:

1. 3 mW

2.4.9 mW

3.5.2 mW

4. 2 mW

Question: 
 In the plot of the magnitude of electric field around the periphery of the junction circulator, the curve has:

1.Three peaks

2.Two peaks

3.Four peaks

4.None of the mentioned

Question: 
 In the series configuration of a PIN diode switch, the terminated load impedance was found to be 50 Ω and the diode impedance was 60

1.4 dB

2.2 dB

3.3.6 dB

4.4.8 dB

Question: 
 The expression for linear dynamic range is given by:

1.OP1 dB- No

2.OP1 dB/ No

3.OP1 dB+No

4.None of the mentioned

Question: 
 The magnetic properties of a material are due to the existence of ___________

1. Electrons in atoms

2.Electric dipole moment

3.Magnetic dipole moment

4.None of the mentioned

Question: 
 The output response of a non-linear circuit is given by the expression:

1.V0=a0+a1Vi1+a2Vi2+a3Vi3…

2.0=a0+a1Vi1

3.V0=a2Vi2+a3Vi3

4.V0=a0

Question: 
 The resistance of the PIN diode with positive bias voltage:

1.Increases

2.Decreases

3.Remains constant

4.Insufficient data

Question: 
 The width of depletion region of a varactor diode ________with increase in reverse bias voltage.

1.IncreasesIncreases

2.Decreases

3.Remains constant

4.None of the mentioned

Question: 
 Varactor diode is a semiconductor diode in which the _________ can be varied as a function of reverse voltage of the diode.

1.Junction resistance

2.Junction capacitance

3.Junction impedance

4.None of the mentioned

Question: 
 Varactors made of ______ have higher frequency range of operation compared to silicon fabricated varactor diodes.

1.Germanium

2.GaAs

3.GaN

4.None of the mentioned

Question: 
 Varactors made of ______ have higher frequency range of operation compared to silicon fabricated varactor diodes.

1.Germanium

2.GaAs

3.GaN

4.None of the mentioned

Question: 
 Varactors made of ______ have higher frequency range of operation compared to silicon fabricated varactor diodes.

1.Germanium

2.GaAs

3.GaN

4.None of the mentioned

Question: 
 When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

1.increases linearly

2.decreases linearly

3.increases exponentially

4.decreases exponentially

Question: 
. In a non-linear device, for a single input frequency the output will consist of:

1.Single frequency component

2.Harmonics of the input frequency

3.Constant gain

4.None of the mentioned

Question: 
A PIN diode consists of ______number of semiconductor layers.

1.Three

2.Two

3.Four

4.one

Question: 
A receiver has a noise figure of 7 dB, gain of 40 dB, noise temperature is 290 K. then the noise power at the receiver is:

1.47. 4 dBm

2. -47.4 dBm

3.23 dBm

4. -23 dBm

Question: 
Active devices like diodes and transistors become non-linear at high power levels due to:

1.Instability of transistor

2.Thermal noise

3. Gain compression

4.None of the mentioned

Question: 
After demagnetization of a magnetic material, the residual magnetization retained in the magnetic material is called:

1.Remanence

2.Residue

3.Retardation

4.None of the mentioned

Question: 
An amplifier has a noise equivalent temperature of 170 K. If the amplifier is used with a source having an equivalent noise temperature of TS=450 K, the output noise power of the amplifier is:

1. -50 dBm

2.-60 dBm

3.-60.7 dBm

4.-55 dBm

Question: 
An X- band amplifier has a gain of 20 dB and a gain of 1GHz bandwidth. Noise figure of the amplifier is -62 dBm at 290 K and -64.7 dBm at 77 K. then the Y factor of the amplifier is :

1.3 dB

2.6.4 dB

3.2.7 dB

4.5.6 dB

Question: 
Equivalent noise temperature associated with an arbitrary white noise source is:

1.N0/GKB

2.N0

3. N0/ kB

4.None of the mentioned

Question: 
Ferrite isolators are ____ port microwave devices.

1.Two

2.Three

3.Four

4.None of the mentioned

Question: 
For a receiver, 1 dB compression point is 25 dBm and the noise power at the receiver output is -47.4 dBm, the linear dynamic range is:

1.70 dB

2.72.4 dB

3.68 dB

4.85 dB

Question: 
Forward attenuation provided by a resonance ferrite isolator is:

1.Zero

2.Low

3.High

4.None of the mentioned

Question: 
Gyrator is a device that produces a phase shift of ____ between the input and output.

1.90⁰

2.180⁰

3.45⁰

4.None of the mentioned

Question: 
If a ferrite slab provides a phase shift of 48⁰/ cm, then the length of the ferrite slab required to produce a phase shift of 180⁰ is:

1.4 cm

2.3.75 cm

3.4.5 cm

4.3.5 cm

Question: 
If a ferrite slab provides a phase shift of 48⁰/ cm, then the length of the ferrite slab required to produce a phase shift of 90⁰ is:

1.2.44 cm

2.1.88 cm

3.4.5 cm

4.3.5 cm

Question: 
In a stripline junction circulator, the ferrite material is present in the form of a:

1.Slab

2.Ferrite disk

3.Ferrite material is not used in a microstrip circulator

4.Ferrite cubes

Question: 
In the scattering matrix representation of a non-ideal circulator, the diagonal elements of the matrix are:

1.Zero

2.One

3.Reflection coefficient Г

4.None of the mentioned

Question: 
Parametric amplifier is a ________ amplifier.

1.Low noise

2.High gain

3.Low gain

4.High noise

Question: 
Passive intermodulation is significant only when:

1.The input signal levels are low

2. Input signal levels are high

3.Input signal is sinusoidal

4.Input signal is exponential

Question: 
Phase shifters are used in _______ where the antenna beam can be steered in space by electronically controlled phase shifters.

1.Phased array antennas

2.Dipole array antennas

3.Slot antennas

4.Patch antennas

Question: 
Practically, opposite circulatory in a ferrite circulator can be obtained by:

1.Changing the order of port operation

2.Impedance matching the input ports

3.Changing the polarity of the magnetic bias field

4.None of the mentioned

Question: 
Silicon and germanium are called ___________ semiconductors.

1. direct gap

2.indirect gap

3.band gap

4. indirect band gap

Question: 
The attenuation of a ________ is very large near the gyro magnetic resonance of the ferrite.

1.Linearly polarized wave

2.Circularly polarized wave

3.Left polarized wave

4.Right polarized wave

Question: 
The cutoff frequency for operation of a varactor diode at a specific bias is given by:

1.1/2Ï€RSCjv

2. 1/2Ï€CSRjv

3.1/2π√LC

4.None of the mentioned

Question: 
The electric field distribution of the forward and reverse waves in a ferrite slab-loaded waveguide is quite different. This property is used in:

1.Field displacement resonator

2.Resonance isolator

3.Waveguide isolator

4.None of the mentioned

Question: 
The isolators constructed using ferrite materials must operate at:

1.Gyro magnetic resonance

2.Magnetic resonance

3.Isolator resonance

4.None of the mentioned

Question: 
The junction resistance and capacitance of the intrinsic region in a PIN diode are connected______ in the equivalent circuit of PIN diode.

1.Series

2.Parallel

3.Connected across package capacitance

4.None of the mentioned

Question: 
The length of a ferrite slab required operating with a minimum forward insertion loss and 30 dB reverse attenuation and the reverse attenuation at this point is:

1.3 cm

2.2.4 cm

3.4 cm

4.3.6 cm

Question: 
The material out of which PIN diode is made is:

1.Silicon

2.Germanium

3.GaAs

4.None of the mentioned

Question: 
The matrix of an ideal isolator is not ______

1.Unitary

2.Symmetric

3.Lossless

4.None of the mentioned

Question: 
The matrix of an ideal isolator is not ______

1.Unitary

2.Symmetric

3.Lossless

4.None of the mentioned

Question: 
The noise power associated with a two port network modeled as thevinin equivalent is:

1.kTB

2.k/TB

3.TB/ K

4.None of the mentioned

Question: 
The operating point of a permanent magnet is in the:

1.First quadrant

2.Second quadrant

3.Third quadrant

4.Fourth quadrant

Question: 
The relation between an intercept points referenced at the input versus the output is given by the relation:

1.OIP3=G (IIP3)

2.(IIP3) = G (OIP3)

3.OIP3=G (IIP3)2

4.None of the mentioned

Question: 
The scattering matrix of a gyrator is:

1.Symmetric

2.Skew symmetric

3.Identity matrix

4.Null matrix

Question: 
The total number of ones in the scattering matrix of an ideal circulator is:

1.4

2.3

3.5

4.2

Question: 
The type of noise caused by vibration of bound charges is called:

1.Thermal noise

2.Shot noise

3.Flicker noise

4.None of the mentioned

Question: 
The Y factor of an amplifier obtained by measuring the noise figure at the temperatures 77 K and 290 K is 2.7 db. Then the equivalent noise temperature of the amplifier is:

1.100 K

2.150 K

3.170 K

4.None of the mentioned

Question: 
The ________property of devices like diodes and transistors is responsible for their usage in amplifiers and frequency convertors.

1.Symmetry

2.Non linearity

3.Linearity

4.None of the mentioned

Question: 
This is not an example of anisotropic material:

1.Yttrium aluminum garnet

2.Aluminum

3.Cobalt

4.Silicon

Question: 
Under ideal conditions, when a PIN diode is used as a switch, the switch must have _______ insertion loss in the ON state.

1.Maximum

2.Zero

3.Average

4.Insertion loss cannot be defined for a switch

Question: 
When PIN diode is used as a switch, the expression for insertion loss of the switch is given by:

1.10 log (Po/PL)

2.10 log (PL/P0)

3.10 log (PL. Pâ‚’)

4.None of the mentioned

Question: 
When the input frequency consists of more than one closely spaced frequency, it results in:

1.Intermodal distortion

2.Gain compression

3.Signal fading

4.Signal attenuation

Question: 
_______ is a three-port microwave device that can be lossless and matched at all spots.

1.Hybrid junction

2.Magic Tee

3.Circulator

4.Isolator

Question: 
________ is defined as the operating range for which a component or system has desirable characteristics.

1.Static range

2.Dynamic range

3.Characteristic gain

4.None of the mentioned

Question: 
________ noise is caused by random motion of charges in ionized gas.

1.Plasma noise

2.Quantum noise

3.Thermal noise

4.Flicker noise

Question: 
________ noise occurs due to the random fluctuation of charge in an electron tube.

1. Flicker noise

2.Shot noise

3.Thermal noise

4.White noise

Question: 
__________ is a measure of the relative contributions of the orbital moment and the spin moment to the total magnetic moment.

1.Lande’s factor

2.Gibbs factor

3.Newton’s ratio

4.None of the mentioned

Question: 
__________ is a measure of the relative contributions of the orbital moment and the spin moment to the total magnetic moment.

1.Lande’s factor

2.Gibbs factor

3.Newton’s ratio

4.None of the mentioned

Question: 
___________ is an amplifier constructed using a device whose reactance is varied to produce amplification.

1.Travelling wave tube

2.Parametric amplifier

3.Common emitter

4.Klystron amplifier

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